Abstract
The effect of Bi substitution on phase transformation in Ge 22Sb22Te56 (GST) chalcogenide system has been studied. Partial substitution of Bi upto 2 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Bi (i. e. ∼4 and 6 at %) the films were found to exhibit increased room temperature conductivity. Optical study shows the partial decrease in bandgap for Ge22Sb20Bi2Te56 composition in comparison to pure GST. XRD investigation of annealed samples reveals that Bi substitution retains NaCl type crystalline structure of GST.
| Original language | English |
|---|---|
| Pages (from-to) | 1082-1085 |
| Number of pages | 4 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 13 |
| Issue number | 9 |
| Publication status | Published - Sept 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering