Effect of O₂/Ar flow ratio on Ga and Al co-doped ZnO thin films by rf sputtering for optoelectronic device fabrication

Engineering & Materials Science

• Sputtering 100%
• Optoelectronic devices 90%
• Thin films 73%
• Raman spectroscopy 69%
• Fabrication 57%
• Charge carriers 39%
• Carrier concentration 36%
• Magnetron sputtering 34%
• Opacity 33%
• X ray diffraction analysis 32%
• Crystallinity 31%
• Tensile stress 26%
• Physical properties 23%
• Residual stresses 22%
• Surface roughness 21%
• Oxygen 21%
• Glass 20%
• Substrates 18%

Physics & Astronomy

• optoelectronic devices 77%
• sputtering 61%
• fabrication 47%
• thin films 40%
• wurtzite 31%
• Raman spectroscopy 26%
• electrical impedance 16%
• tensile stress 16%
• figure of merit 14%
• residual stress 14%
• crystallinity 13%
• charge carriers 13%
• radio frequencies 13%
• surface roughness 13%
• magnetron sputtering 13%
• transmittance 13%
• physical properties 12%
• disorders 12%
• electrical resistivity 9%
• oxygen 9%
• glass 9%
• diffraction 8%
• x rays 7%
• energy 4%

Chemical Compounds

• Sputtering 84%
• Optoelectronics 70%
• Flow 50%
• Raman Spectroscopy 23%
• Liquid Film 22%
• Magnetron Sputtering 18%
• Figure of Merit 17%
• Surface Roughness 15%
• Transmittance 15%
• Glass Substrate 15%
• Charge Carrier 15%
• Disorder 13%
• Hexagonal Space Group 12%
• Crystallinity 11%
• X-Ray Diffraction 7%
• Dioxygen 7%
• Energy 7%
• Reduction 7%