Effect of O₂/Ar flow ratio on Ga and Al co-doped ZnO thin films by rf sputtering for optoelectronic device fabrication

Keyphrases

• RF Sputtering 100%
• Co-doped ZnO Thin Films 100%
• Flow Ratio 100%
• Device Fabrication 100%
• Ar Flow 100%
• Raman Spectroscopy 33%
• High Figure of Merit 16%
• Hexagonal Wurtzite 16%
• Urbach Energy 16%
• X-ray Diffraction (XRD) Analysis 16%
• Residual Tensile Stress 16%
• Glass Substrate 16%
• Visible Region 16%
• Crystallinity 16%
• Physical Properties 16%
• Structural Disorder 16%
• Radio Frequency Magnetron Sputtering 16%
• Electrical Conductivity 16%
• High Optical Transmittance 16%
• Low Surface Roughness 16%

Engineering

• Thin Films 100%
• Optoelectronic Device 100%
• Energy Engineering 50%
• Glass Substrate 50%
• X-Ray Diffraction Analysis 50%
• Magnetron 50%
• Crystallinity 50%
• Radio Frequency 50%
• Carrier Concentration 50%
• Tensile Residual Stress 50%
• Structural Disorder 50%

Material Science

• Charge Carrier 33%