Effects of surface passivation on top-down ZnO nanowire transistors

N. M.J. Ditshego, K. Sun, I. Zeimpekis, P. Ashburn, M. R.R. De Planque, H. M.H. Chong

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalMicroelectronic Engineering
Publication statusPublished - Sept 1 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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