Effects of surface passivation on top-down ZnO nanowire transistors

N. M.J. Ditshego; K. Sun; I. Zeimpekis; P. Ashburn; M. R.R. De Planque; H. M.H. Chong

doi:10.1016/j.mee.2015.03.013

Effects of surface passivation on top-down ZnO nanowire transistors

N. M.J. Ditshego, K. Sun, I. Zeimpekis, P. Ashburn, M. R.R. De Planque, H. M.H. Chong

Electrical, Computer & Telecommunications Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al₂O₃ passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 10⁶ and field effect mobility of 31.4 cm²/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 10⁴ and improvement of mobility of 35.5 cm²/V s. The passivated device results indicate suitability for biosensing applications.

Original language	English
Pages (from-to)	91-95
Number of pages	5
Journal	Microelectronic Engineering
Volume	145
DOIs	https://doi.org/10.1016/j.mee.2015.03.013
Publication status	Published - Sept 1 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2015.03.013

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@article{7cb90446dfef4f4280fbde752d2dcf44,

title = "Effects of surface passivation on top-down ZnO nanowire transistors",

abstract = "We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.",

author = "Ditshego, {N. M.J.} and K. Sun and I. Zeimpekis and P. Ashburn and {De Planque}, {M. R.R.} and Chong, {H. M.H.}",

year = "2015",

month = sep,

day = "1",

doi = "10.1016/j.mee.2015.03.013",

language = "English",

volume = "145",

pages = "91--95",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of surface passivation on top-down ZnO nanowire transistors

AU - Ditshego, N. M.J.

AU - Sun, K.

AU - Zeimpekis, I.

AU - Ashburn, P.

AU - De Planque, M. R.R.

AU - Chong, H. M.H.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.

AB - We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.

UR - http://www.scopus.com/inward/record.url?scp=84961626507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961626507&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.03.013

DO - 10.1016/j.mee.2015.03.013

M3 - Article

AN - SCOPUS:84961626507

SN - 0167-9317

VL - 145

SP - 91

EP - 95

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Effects of surface passivation on top-down ZnO nanowire transistors

Abstract

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