The electrical and emission properties of nitorgen doped hydrogenated amophous carbon films were investigated for stress reducing and improving field emission properties. These films were prepared by plasma enhanced chemical vapor deposition under biased voltages and doping in an atomic nitrogen flux from radiofrequency plasmas. The surface morphology, film thickness and surface contact measurements were carried out using x-ray photoelectron spectroscopy, atomic force spectroscopy, surface profiling techniques and Kelvin probe method. The extraction of density of states and electrical conductivity at the fermi level were also determined.
|Number of pages
|Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
|Published - Sept 2001
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films