Abstract
Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.
Original language | English |
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Pages (from-to) | 663-668 |
Number of pages | 6 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 209 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2012 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Surfaces and Interfaces