Abstract
The effect of Sn substitution on phase transformation in Ge 22Sb22Te56 (GST) chalcogenide system has been studied. Partial substitution of Sn upto 4 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Sn (i.e. ∼ 6 at %) the films were found to exhibit decreased phase transformation temperature. Optical study does not show any considerable change in optical band gap for Sn 2 and 4 at%. XRD investigation of annealed samples revealed that Sn substitution retains NaCl type crystalline structure of GST.
Original language | English |
---|---|
Pages (from-to) | 455-459 |
Number of pages | 5 |
Journal | Journal of Optoelectronics and Advanced Materials |
Volume | 14 |
Issue number | 5-6 |
Publication status | Published - 2012 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering