TY - JOUR
T1 - Optical properties and Raman studies of amorphous Se-Bi thin films
AU - Mulama, Austine A.
AU - Mwabora, Julius M.
AU - Oduor, Andrew O.
AU - Muiva, Cosmas C.
PY - 2014
Y1 - 2014
N2 - Flash evaporated amorphous Se100-xBix(x = 0, 1, 2, 3, and 4 at.%) thin films of 350 ± 10nm thickness have been investigated in the wavelength range of 200nm - 3000nm. It is found that the effect of increasing bismuth content on the as deposited films led to increased absorption coefficient, reflectance, refractive index and extinction coefficient while transmittance and optical band gap energy decreased. The Raman spectra showed peaks at 238.8cm-1, 248.3cm-1, 249.5cm-1, 250.7cm-1, 251.9cm-1, 488.1cm-1, and 489.3cm-1 due to selenium rings and chains at various bismuth concentrations.
AB - Flash evaporated amorphous Se100-xBix(x = 0, 1, 2, 3, and 4 at.%) thin films of 350 ± 10nm thickness have been investigated in the wavelength range of 200nm - 3000nm. It is found that the effect of increasing bismuth content on the as deposited films led to increased absorption coefficient, reflectance, refractive index and extinction coefficient while transmittance and optical band gap energy decreased. The Raman spectra showed peaks at 238.8cm-1, 248.3cm-1, 249.5cm-1, 250.7cm-1, 251.9cm-1, 488.1cm-1, and 489.3cm-1 due to selenium rings and chains at various bismuth concentrations.
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M3 - Article
AN - SCOPUS:84903454732
SN - 2223-6589
VL - 9
SP - 33
EP - 38
JO - African Review of Physics
JF - African Review of Physics
ER -