Structure, optical and electrical properties of sol-gel derived Zn1.5+xSn1.5-xO4 nanostructured films for optoelectronic applications

Isha Arora; Praveen Kumar; T. S. Sathiaraj; R. Thangaraj

doi:10.1016/j.tsf.2020.137871

Structure, optical and electrical properties of sol-gel derived Zn_1.5+xSn_1.5-xO₄ nanostructured films for optoelectronic applications

Isha Arora, Praveen Kumar, T. S. Sathiaraj, R. Thangaraj

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This work reports the structure-property relationship of sol gel synthesized Zn_1.5+xSn_1.5-xO₄ films using acetylacetone as precursor solvent and stabilizer. These samples were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, optical spectroscopy and Hall measurements. XRD study reveals the preferentially grown along (311) with a change in its intensity for different compositions in Zn-Sn-O system. The surface morphology varies with composition has been observed in both SEM and AFM studies. The dominant Raman active modes were observed at 556 and 667 cm⁻¹ corresponding to F_2g and A_1g modes respectively of Zn₂SnO₄ system. The optical gap varies between 3.85 eV to 3.96 eV and defect related emission spectra dominate the luminescence characteristics for the present system. The minimum electrical resistivity 8.4 × 10⁻³ Ω-cm and maximum figure of merit of 0.09 Ω⁻¹ has been found for Zn_2.25Sn_0.75O₄ films. These results show their suitability for fabrication of transparent conductors and other sensing device applications.

Original language	English
Article number	137871
Journal	Thin Solid Films
Volume	698
DOIs	https://doi.org/10.1016/j.tsf.2020.137871
Publication status	Published - Mar 31 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Structure, optical and electrical properties of sol-gel derived Zn1.5+xSn1.5-xO4 nanostructured films for optoelectronic applications",

abstract = "This work reports the structure-property relationship of sol gel synthesized Zn1.5+xSn1.5-xO4 films using acetylacetone as precursor solvent and stabilizer. These samples were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, optical spectroscopy and Hall measurements. XRD study reveals the preferentially grown along (311) with a change in its intensity for different compositions in Zn-Sn-O system. The surface morphology varies with composition has been observed in both SEM and AFM studies. The dominant Raman active modes were observed at 556 and 667 cm−1 corresponding to F2g and A1g modes respectively of Zn2SnO4 system. The optical gap varies between 3.85 eV to 3.96 eV and defect related emission spectra dominate the luminescence characteristics for the present system. The minimum electrical resistivity 8.4 × 10−3 Ω-cm and maximum figure of merit of 0.09 Ω−1 has been found for Zn2.25Sn0.75O4 films. These results show their suitability for fabrication of transparent conductors and other sensing device applications.",

author = "Isha Arora and Praveen Kumar and Sathiaraj, {T. S.} and R. Thangaraj",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

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doi = "10.1016/j.tsf.2020.137871",

language = "English",

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T1 - Structure, optical and electrical properties of sol-gel derived Zn1.5+xSn1.5-xO4 nanostructured films for optoelectronic applications

AU - Arora, Isha

AU - Kumar, Praveen

AU - Sathiaraj, T. S.

AU - Thangaraj, R.

PY - 2020/3/31

Y1 - 2020/3/31

N2 - This work reports the structure-property relationship of sol gel synthesized Zn1.5+xSn1.5-xO4 films using acetylacetone as precursor solvent and stabilizer. These samples were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, optical spectroscopy and Hall measurements. XRD study reveals the preferentially grown along (311) with a change in its intensity for different compositions in Zn-Sn-O system. The surface morphology varies with composition has been observed in both SEM and AFM studies. The dominant Raman active modes were observed at 556 and 667 cm−1 corresponding to F2g and A1g modes respectively of Zn2SnO4 system. The optical gap varies between 3.85 eV to 3.96 eV and defect related emission spectra dominate the luminescence characteristics for the present system. The minimum electrical resistivity 8.4 × 10−3 Ω-cm and maximum figure of merit of 0.09 Ω−1 has been found for Zn2.25Sn0.75O4 films. These results show their suitability for fabrication of transparent conductors and other sensing device applications.

AB - This work reports the structure-property relationship of sol gel synthesized Zn1.5+xSn1.5-xO4 films using acetylacetone as precursor solvent and stabilizer. These samples were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, optical spectroscopy and Hall measurements. XRD study reveals the preferentially grown along (311) with a change in its intensity for different compositions in Zn-Sn-O system. The surface morphology varies with composition has been observed in both SEM and AFM studies. The dominant Raman active modes were observed at 556 and 667 cm−1 corresponding to F2g and A1g modes respectively of Zn2SnO4 system. The optical gap varies between 3.85 eV to 3.96 eV and defect related emission spectra dominate the luminescence characteristics for the present system. The minimum electrical resistivity 8.4 × 10−3 Ω-cm and maximum figure of merit of 0.09 Ω−1 has been found for Zn2.25Sn0.75O4 films. These results show their suitability for fabrication of transparent conductors and other sensing device applications.

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Structure, optical and electrical properties of sol-gel derived Zn_1.5+xSn_1.5-xO₄ nanostructured films for optoelectronic applications

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