Thermal analysis and annealing temperature dependence of electrical properties in Sn₁₀Sb₂₀Se₇₀ glassy semiconductor

The melt-quenched Sn₁₀Sb₂₀Se₇₀ sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb ₂Se₃ phase in the major proportion as compared to the SnSe₂ phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between ΔE and E _o is observed, indicating the validity of Meyer-Neldel rule with the change in the annealing temperature.